IRFZ34NPBF Datasheet - International Rectifier

IRFZ34NPBF, HEXFET Power MOSFET

PD - 94807 IRFZ34NPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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IRFZ34NPBF_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFZ34NPBF

Manufacturer:

International Rectifier

File Size:

178.90 KB

Description:

HEXFET Power MOSFET

Features

* ANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED O N WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIO

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB D VDSS = 55V RDS(on) = 0.0

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IRFZ34NPBF HEXFET Power MOSFET International Rectifier

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