Part number: IRFZ44EPBF
Manufacturer: International Rectifier
File Size: 173.33KB
Download: 📄 Datasheet
Description: Power MOSFET
Part number: IRFZ44EPBF
Manufacturer: International Rectifier
File Size: 173.33KB
Download: 📄 Datasheet
Description: Power MOSFET
er same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform .
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .
Image gallery
TAGS
📁 Related Datasheet
IRFZ44E - Power MOSFET
(International Rectifier)
PD - 91671B
IRFZ44E
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully.
IRFZ44EL - Power MOSFET
(International Rectifier)
PD - 9.1714
PRELIMINARY
IRFZ44ES/L
HEXFET® Power MOSFET
D
l l l l l l
Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hol.
IRFZ44ELPBF - Power MOSFET
(International Rectifier)
www..com
PD - 95572
IRFZ44ESPbF IRFZ44ELPbF
l l l l l l l
Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole .
IRFZ44ES - Power MOSFET
(International Rectifier)
PD - 9.1714
PRELIMINARY
IRFZ44ES/L
HEXFET® Power MOSFET
D
l l l l l l
Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hol.
IRFZ44ESPBF - Power MOSFET
(International Rectifier)
www..com
PD - 95572
IRFZ44ESPbF IRFZ44ELPbF
l l l l l l l
Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole .
IRFZ44 - Power MOSFET
(International Rectifier)
.
IRFZ44A - Advanced Power MOSFET
(Samsung)
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,P.
IRFZ44CN - N-Channel MOSFET Transistor
(Inchange)
INCHANGE Semiconductor
www..com
isc Product Specification
isc N-Channel MOSFET Transistor
IRFZ44CN
FEATURES ·Drain Current –ID=49A@ TC=.
IRFZ44L - Power MOSFET
(International Rectifier)
PD - 9.1714
PRELIMINARY
IRFZ44ES/L
HEXFET® Power MOSFET
D
l l l l l l
Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hol.
IRFZ44N - Power MOSFET
(International Rectifier)
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche R.