IRFZ44ESPBF - Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
IRFZ44ESPBF Features
* W 02, 2000 IN T HE AS S EMB LY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L ASS EMBLY LOT CODE OR INT ERNAT IONAL RE CT IFIER LOGO AS S EMBLY LOT CODE PART NUMBE R F 530S DAT E CODE P =
