IRG4CC20FB - IGBT Die

International Rectifier (now Infineon)

General Description

1.6V Max.

600V Min.

3.0V Min., 6.0V Max.

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IRG4CC20FB igbt die by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4CC20FB
Manufacturer	International Rectifier (now Infineon)
File Size	60.00 KB
Description	IGBT Die
Datasheet	IRG4CC20FB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRG4CC20FB IGBT Die in Wafer Form PD- 91831A IRG4CC20FB C G E 600 V Size 2 Fast Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) VCE (on) V(BR)CES Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage 1.6V Max. 600V Min. VGE(th) ICES Gate Threshold Voltage Zero Gate Voltage Collector Current 3.0V Min., 6.0V Max. 250µA Max. IGES Gate-to-Emitter Leakage Current ± 1.1µA Max. Test Conditions IC = 3.