Datasheet Details
| Part number | IRG4CC20FB |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 60.00 KB |
| Description | IGBT Die |
| Datasheet |
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| Part number | IRG4CC20FB |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 60.00 KB |
| Description | IGBT Die |
| Datasheet |
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Guaranteed (Min/Max) VCE (on) V(BR)CES Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage 1.6V Max.
600V Min.
VGE(th) ICES Gate Threshold Voltage Zero Gate Voltage Collector Current 3.0V Min., 6.0V Max.
IRG4CC20FB IGBT Die in Wafer Form PD- 91831A IRG4CC20FB C G E 600 V Size 2 Fast Speed 6" Wafer Electrical Characteristics ( Wafer Form ).
| Part Number | Description |
|---|---|
| IRG4CC50UB | IGBT Die |
| IRG4CC50WB | IGBT Die |
| IRG4CC71KB | IGBT Die |
| IRG4CH40SB | IGBT Die |
| IRG41BC10UDPBF | Insulated Gate Bipolar Transistor |
| IRG41BC30UD | Ultra Fast CoPack IGBT |
| IRG4BC10K | Short Circuit Rated UltraFast IGBT |
| IRG4BC10KD | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC10KDPBF | HEXFET Power MOSFET |
| IRG4BC10S | INSULATED GATE BIPOLAR TRANSISTOR |