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IRG4CC20FB

IGBT Die

IRG4CC20FB General Description

Guaranteed (Min/Max) VCE (on) V(BR)CES Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage 1.6V Max. 600V Min. VGE(th) ICES Gate Threshold Voltage Zero Gate Voltage Collector Current 3.0V Min., 6.0V Max. 250µA Max. IGES Gate-to-Emitter Leakage Current ± 1.1µA Max..

IRG4CC20FB Datasheet (60.00 KB)

Preview of IRG4CC20FB PDF

Datasheet Details

Part number:

IRG4CC20FB

Manufacturer:

International Rectifier

File Size:

60.00 KB

Description:

Igbt die.
IRG4CC20FB IGBT Die in Wafer Form PD- 91831A IRG4CC20FB C G E 600 V Size 2 Fast Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Paramete.

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IRG4CC20FB IGBT Die International Rectifier

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