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IRHF8130 - RADIATION HARDENED POWER MOSFET

This page provides the datasheet information for the IRHF8130, a member of the IRHF4130 RADIATION HARDENED POWER MOSFET family.

Datasheet Summary

Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avala.

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Datasheet Details

Part number IRHF8130
Manufacturer International Rectifier
File Size 443.96 KB
Description RADIATION HARDENED POWER MOSFET
Datasheet download datasheet IRHF8130 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com PD - 90653E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF7130 100K Rads (Si) IRHF3130 300K Rads (Si) IRHF4130 600K Rads (Si) IRHF8130 1000K Rads (Si) R DS(on) 0.18 Ω 0.18 Ω 0.18 Ω 0.18Ω IRHF7130 JANSR2N7261 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY ID QPL Part Number 8.0A JANSR2N7261 8.0A JANSF2N7261 8.0A JANSG2N7261 8.0A JANSH2N7261 ™ ® TO-39 International Rectifier’s RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
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