IRHF8130 Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: www.DataSheet4U.com PD - 90653E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF7130 100K Rads (Si) IRHF3130 300K Rads (Si) IRHF4130 600K Rads (Si) IRHF8130 1000K Rads (Si) R DS(on) 0.18 Ω 0.18 Ω 0.18 Ω 0.18Ω IRHF7130 JANSR2N7261 100V, N-CHANNEL REF: MIL-PRF-19500/601 RAD Hard HEXFET TECHNOLOGY ID QPL Part Number 8.0A JANSR2N7261 8.0A JANSF2N7261 8.0A JANSG2N7261 8.0A JANSH2N7261 ™ ® TO-39 International Rectifier’s RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IRHF8130
Manufacturer	International Rectifier (now Infineon)
File Size	443.96 KB
Description	RADIATION HARDENED POWER MOSFET
Datasheet	IRHF8130 IRHF4130 Datasheet (PDF)

Key Features

n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avala.

IRHF8130 Distributor

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