IRHM57264SE Datasheet - International Rectifier

IRHM57264SE RADIATION HARDENED POWER MOSFET

PD-93798B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) IRHM57264SE 250V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) ID 0.066Ω 35A International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduc.

IRHM57264SE Features

* n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS

IRHM57264SE Datasheet (162.89 KB)