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IRHMB57260SE Datasheet - International Rectifier

IRHMB57260SE RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD-96971 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number IRHMB57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A IRHMB57260SE 200V, N-CHANNEL 5 TECHNOLOGY Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combin.

IRHMB57260SE Features

* n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V,

IRHMB57260SE Datasheet (213.39 KB)