IRHMB58Z60 Datasheet - International Rectifier

IRHMB58Z60 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD-96973 RADIATION HARDENED IRHMB57Z60 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (Tabless - Low-Ohmic TO-254AA) 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHMB57Z60 100K Rads (Si) IRHMB53Z60 300K Rads (Si) IRHMB54Z60 600K Rads (Si) IRHMB58Z60 1000K Rads (Si) RDS(on) ID 0.0045Ω 45A 0.0045Ω 45A 0.0045Ω 45A 0.0045Ω 45A Tabless Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides high performance power MOSFETs for space app.

IRHMB58Z60 Features

* n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V,

IRHMB58Z60 Datasheet (197.06 KB)