IRHNB4160 Datasheet - International Rectifier

IRHNB4160 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 91795A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) Product Summary Part Number IRHNB7160 IRHNB3160 IRHNB4160 IRHNB8160 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.040Ω 0.040Ω 0.040Ω 0.040Ω HEXFET® ID 51A 51A 51A 51A IRHNB7160 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a de.

IRHNB4160 Features

* ! ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 1

IRHNB4160 Datasheet (249.92 KB)