Part number: IRHNB4160
Manufacturer: International Rectifier
File Size: 249.92KB
Download: 📄 Datasheet
Description: RADIATION HARDENED POWER MOSFET
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Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Seal.
This technology has over a decade of proven performance and reliability in satellite applications. These devices have b.
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REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHN2C50SE IRHN7C50SE
N-CHANNEL
SINGLE EVENT EFFECT (.
