IRL3715ZS Datasheet - International Rectifier

IRL3715ZS HEXFET Power MOSFET

PD - 94793 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET IRL3715Z IRL3715ZS IRL3715ZL Qg 7.0nC VDSS RDS(on) max 20V 11m: Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3715Z D2Pak IRL3715ZS TO-262 IRL3715ZL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate.

IRL3715ZS Features

* s which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be s

IRL3715ZS Datasheet (303.45 KB)