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IRL3705NPbF Power MOSFET

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Description

* Logic - Level Gate Drive * Advanced Process Technology * Dynamic dv/dt Rating * 175°C Operating Temperature * Fast Switching Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

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Applications

* The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. D G S IRL3705NPbF HEXFET® Power MOS

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