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IRL3705N

Power MOSFET

IRL3705N General Description

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient an.

IRL3705N Datasheet (444.32 KB)

Preview of IRL3705N PDF

Datasheet Details

Part number:

IRL3705N

Manufacturer:

International Rectifier

File Size:

444.32 KB

Description:

Power mosfet.

* Logic - Level Gate Drive
* Advanced Process Technology
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching

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IRL3705N Power MOSFET International Rectifier

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