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IRL3103 - N-Channel MOSFET

Description

design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source V

Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤12mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRL3103

Datasheet Details

Part number IRL3103
Manufacturer INCHANGE
File Size 241.42 KB
Description N-Channel MOSFET
Datasheet download datasheet IRL3103 Datasheet
Additional preview pages of the IRL3103 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRL3103，IIRL3103 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 64 IDM Drain Current-Single Pulsed 220 PD Total Dissipation @TC=25℃ 94 Tj Max.
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