IRL60HS118 Datasheet, Mosfet, Infineon

PDF File Details

Part number:

IRL60HS118

Manufacturer:

Infineon ↗

File Size:

1.05MB

Download:

📄 Datasheet

Description:

Mosfet.

TAGS

IRL60HS118

Infineon

📁 Related Datasheet

IRL60B216 - Power MOSFET (International Rectifier)
Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies .

IRL60B216 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL60B216，IIRL60B216 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.9mΩ ·Enhancemen.

IRL60S216 - IR MOSFET (Infineon)
Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies .

IRL60S216 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IRL60S216 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1.

IRL60SL216 - IR MOSFET (Infineon)
Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies .

IRL610 - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende.

IRL610A - Advanced Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende.

IRL610S - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRL610S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.

IRL620 - Power MOSFET (Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7 IRL620 FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitanc.

IRL620 - Power MOSFET (Vishay)
Power MOSFET IRL620, SiHL620 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 200 VGS = 5.0 V 16 Qgs (nC) 2.7 Qgd (nC) 9.6 .