IRL610
Fairchild Semiconductor
234.29kb
Power mosfet.
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IRL610A - Advanced Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende.
IRL610S - Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
IRL610S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRL60B216 - Power MOSFET
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Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies .
IRL60B216 - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRL60B216，IIRL60B216
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤1.9mΩ ·Enhancemen.
IRL60HS118 - MOSFET
(Infineon)
IRL60HS118
Target Applications
Wireless charging Adapter Tele
Benefits
Higher power density designs Higher switching frequency Uses Op.
IRL60S216 - IR MOSFET
(Infineon)
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies .
IRL60S216 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IRL60S216
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1.
IRL60SL216 - IR MOSFET
(Infineon)
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies .
IRL620 - Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
IRL620
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitanc.
IRL620 - Power MOSFET
(Vishay)
Power MOSFET
IRL620, SiHL620
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
200 VGS = 5.0 V
16
Qgs (nC)
2.7
Qgd (nC)
9.6
.
