IRL6297SDPBF Datasheet - International Rectifier

IRL6297SDPBF Power MOSFET

The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile. The DirectFET® package is compatible with existing.

IRL6297SDPBF Features

* l Environmentaly Friendly Product Qg tot 27nC Qgd 9.5nC Qgs2 1.4nC Qrr 21nC Qoss 15nC Vgs(th) 0.80V l RoHs Compliant, Halogen Free l Dual Common-Drain N-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) GG DD SS Applicable DirectFET Outline and Substrate Outline (see

IRL6297SDPBF-InternationalRectifier.pdf