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IRL630S - POWER MOSFET

IRL630S Description

Previous Datasheet Index Next Data Sheet PD - 9.1254 IRL630S HEXFET® Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repe.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

IRL630S Features

* 02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. To Order

IRL630S Applications

* because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A SMD-220 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 5.

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POWER MOSFET International Rectifier
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