IRL630SPBF
International Rectifier
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Power mosfet.
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IRL630S - Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
IRL630S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRL630S - POWER MOSFET
(International Rectifier)
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PD - 9.1254
IRL630S
HEXFET® Power MOSFET
Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repe.
IRL630S - Power MOSFET
(Vishay)
.
IRL630 - Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
IRL630
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitanc.
IRL630 - POWER MOSFET
(International Rectifier)
Previous Datasheet
Index
Next Data Sheet
PD -9.1255
IRL630
HEXFET ® Power MOSFET
Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate .
IRL630 - Power MOSFET
(Vishay)
IRL630, SiHL630
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 40 5.5 24 .
IRL630A - Advanced Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Impro.
IRL630PBF - HEXFET Power MOSFET
(International Rectifier)
PD- 95756
IRL630PbF
Lead-Free
.irf.
1
8/24/04
Free Datasheet http://../
IRL630PbF
2
.irf.
Free Datasheet http.
IRL6342PbF - POWER MOSFET
(International Rectifier)
VDS
VGS
RDS(on) max
(@VGS = 4.5V)
Qg (typical) ID
(@TA = 25°C)
30 ±12 14.6 11 9.9
V V
mΩ nC A
Applications • Battery operated DC motor inverter MOS.
IRL6372PBF - HEXFET Power MOSFET
(International Rectifier)
PD - 97622
IRL6372PbF
VDS VGS RDS(on) max
(@VGS = 4.5V)
30 ±12 17.9 11 8.1
V V mΩ nC A
6 * 6 *
HEXFET® Power MOSFET
' ' ' '.
