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IRL610S - Power MOSFET

Product Overview

Fairchild Semiconductor

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IRL610S Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRL610S

Datasheet Details

Part number	IRL610S
Manufacturer	Fairchild Semiconductor
File Size	235.88 KB
Description	Power MOSFET
Datasheet	IRL610S Datasheet
Additional preview pages of the IRL610S datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
150°C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
Lower RDS(ON): 1.185Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curre.

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Other Datasheets by Fairchild Semiconductor

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Published: Aug 3, 2016 |