IRL610S Datasheet - Fairchild Semiconductor

IRL610S - Power MOSFET

IRL610S Features

* Avalanche Rugged Technology

* Rugged Gate Oxide Technology

* Lower Input Capacitance

* Improved Gate Charge

* Extended Safe Operating Area

* 150°C Operating Temperature

* Lower Leakage Current: 10µA (Max.) @ VDS = 200V

* Lower RDS(ON)

Datasheet Details

IRL610S

Fairchild Semiconductor

235.88 KB

Power mosfet.

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