IRLI540N Datasheet - International Rectifier

HEXFET Power MOSFET

IRLI540N Features

* N M E N T S 1 - G A TE 2 - D R A IN 3 - S O U RC E 7 .1 0 (.2 8 0 ) 6 .7 0 (.2 6 3 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 1 .1 5 (.0 4 5) M IN. 1 2 3 NO T E S : 1 D IME N S IO N ING & T O L E R A N C ING P E R A N S I Y 1 4 .5 M , 1 9 8 2 2 C O N TR O L L ING D IM E N S IO N: IN C H . 3.3 0 (

IRLI540N General Description

l l IRLI540N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.044Ω G ID = 23A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized.

IRLI540N Datasheet (154.36 KB)

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IRLI540N

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International Rectifier

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154.36 KB

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Hexfet power mosfet.
www.DataSheet4U.com PD - 9.1497A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVR.

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IRLI540N HEXFET Power MOSFET International Rectifier

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IRLI540N Features

IRLI540N General Description

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