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IRLI520N Datasheet - International Rectifier

POWER MOSFET

IRLI520N General Description

l l IRLI520N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.18Ω G ID =8.1A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized .

IRLI520N Datasheet (37.87 KB)

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Datasheet Details

Part number:

IRLI520N

Manufacturer:

International Rectifier

File Size:

37.87 KB

Description:

Power mosfet.
PD - 9.1496A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead C.

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IRLI520N POWER MOSFET International Rectifier

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