IRLI530N Datasheet (International Rectifier)

IRLI530N, HEXFET Power MOSFET

l l IRLI530N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.10Ω G ID = 12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized

IRLI530N Features

* imeters (inches) 10.60 (.417) 10.40 (.409) ø 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE A D A S S IG N ME N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 7.10 (.280) 6.70 (.263) 16.00 (.630) 15.80 (.622) 1.15 (.045) M IN . 1 2 3 NOTES: 1 D IME N