Datasheet4U Logo Datasheet4U.com

IRLI2910PbF Power MOSFET

📥 Download Datasheet  Datasheet Preview Page 1

Description

IRLI2910PbF * Logic *Level Gate Drive * Advanced Process Technology * Ultra Low On-Resistance * Isolated Package * High V.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

📥 Download Datasheet

Preview of IRLI2910PbF PDF
datasheet Preview Page 2 datasheet Preview Page 3

Applications

* The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mi

IRLI2910PbF Distributors

📁 Related Datasheet

📌 All Tags

Infineon IRLI2910PbF-like datasheet