IRLI2910 Datasheet - International Rectifier

POWER MOSFET

IRLI2910 Features

* 40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE A D A S S IG N ME N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 7.10 (.280) 6.70 (.263) 16.00 (.630) 15.80 (.622) 1.15 (.045) M IN . 1 2 3 NOTES: 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I

IRLI2910 General Description

l l IRLI2910 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.026Ω G ID = 31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized.

IRLI2910 Datasheet (144.77 KB)

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IRLI2910

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International Rectifier

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144.77 KB

Description:

Power mosfet.
PD - 9.1384B PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.

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IRLI2910 POWER MOSFET International Rectifier

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IRLI2910 Features

IRLI2910 General Description

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