IRLI520G Power MOSFET

Vishay

Description

www.vishay.com IRLI520G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VG.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: IRLI520G
Manufacturer: Vishay ↗
File Size: 268.19 KB
Datasheet: IRLI520G-Vishay.pdf
Description: Power MOSFET

Features

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* Logic-level gate drive
* RDS (on) specified at VGS = 4 V and 5 V
* Fast switching
* Ease of paralleling
* Material

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

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IRLI520G Power MOSFET Vishay

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