IRLI640G Datasheet - Vishay

ower MOSFET

IRLI640G Features

* Isolated package

* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to lead creepage distance = 4.8 mm

* Logic-level gate drive

* RDS(on) specified at VGS = 4 V and 5 V

* Fast switching

* Ease of paralleling

* Material

IRLI640G General Description

Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moldi.

IRLI640G Datasheet (1.03 MB)

IRLI640G Datasheet Preview — Preview of IRLI640G PDF

Datasheet Details

Part number:

IRLI640G

Manufacturer:

Vishay ↗

File Size:

1.03 MB

Description:

Ower mosfet.
www.vishay.com IRLI640G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 VGS .

📁 Related Datasheet

IRLI640A Power MOSFET (Fairchild Semiconductor)

IRLI640G Power MOSFET (International Rectifier)

IRLI640GPBF HEXFET Power MOSFET (International Rectifier)

IRLI610A Advanced Power MOSFET (Fairchild Semiconductor)

IRLI620A Power MOSFET (Fairchild Semiconductor)

IRLI620G Power MOSFET (International Rectifier)

IRLI620GPBF HEXFET Power MOSFET (International Rectifier)

IRLI630A ADVANCED POWER MOSFET (Fairchild Semiconductor)

IRLI630A Advanced Power MOSFET (International Rectifier)

IRLI630G Power MOSFET (International Rectifier)

TAGS

IRLI640G ower MOSFET Vishay

Image Gallery

IRLI640G Features

IRLI640G General Description

Datasheet Details

File Size:

Description:

IRLI640G Distributor