IRLI640G Datasheet - Vishay

IRLI640G, ower MOSFET

www.vishay.com IRLI640G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 VGS .
Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resista.

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Datasheet Details

Part number:

IRLI640G

Manufacturer:

Vishay ↗

File Size:

1.03 MB

Description:

ower MOSFET

Features

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* Logic-level gate drive
* RDS(on) specified at VGS = 4 V and 5 V
* Fast switching
* Ease of paralleling
* Material

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

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IRLI640G ower MOSFET Vishay

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