IRLI640A Features
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* 150°C Operating Temperature
* Lower Leakage Current: 10µA (Max.) @ VDS = 200V
* Lower RDS(ON)
IRLW640A-FairchildSemiconductor.pdf
Datasheet Details
IRLI640A, IRLW640A
Fairchild Semiconductor
225.33 KB
Power mosfet.
This datasheet PDF includes multiple part numbers: IRLI640A, IRLW640A.
Please refer to the document for exact specifications by model.
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IRLI640A Distributor
