IRLI2203N Datasheet - International Rectifier

IRLI2203N POWER MOSFET

l l IRLI2203N HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.007Ω G ID = 61A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized.

IRLI2203N Features

* DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRLI2203N Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) 10.60 (.417 ) 10.40 (.409 ) ø 3 .40 (.1 33) 3 .10 (.

IRLI2203N_InternationalRectifier.pdf