IRLI2203N Datasheet - International Rectifier

POWER MOSFET

IRLI2203N Features

* DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRLI2203N Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) 10.60 (.417 ) 10.40 (.409 ) ø 3 .40 (.1 33) 3 .10 (.

IRLI2203N General Description

l l IRLI2203N HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.007Ω G ID = 61A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized.

IRLI2203N Datasheet (114.68 KB)

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IRLI2203N

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International Rectifier

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114.68 KB

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Power mosfet.
PD - 9.1378A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead C.

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IRLI2203N POWER MOSFET International Rectifier

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IRLI2203N Features

IRLI2203N General Description

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