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IRLI2203N POWER MOSFET

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Description

PD - 9.1378A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead C.
l l IRLI2203N HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.

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Features

* DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRLI2203N Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) 10.60 (.417 ) 10.40 (.409 ) ø 3 .40 (.1 33) 3 .10 (.

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

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