IRLI610A Datasheet - Fairchild Semiconductor

Advanced Power MOSFET

* Avalanche Rugged Technology

* Rugged Gate Oxide Technology

* Lower Input Capacitance

* Improved Gate Charge

* Extended Safe Operating Area

* 150° C Operating Temperature

* Lower Leakage Current: 10µA (Max.) @ VDS = 200V

* Lower RDS(ON

IRLI610A

Fairchild Semiconductor

263.36 KB

Advanced power mosfet.

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IRLI610A Advanced Power MOSFET Fairchild Semiconductor

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