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IRLI530NPBF Datasheet - International Rectifier

HEXFET Power MOSFET

IRLI530NPBF General Description

l PD - 95635 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.10Ω G S ID = 12A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized.

IRLI530NPBF Datasheet (251.15 KB)

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IRLI530NPBF

Manufacturer:

International Rectifier

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251.15 KB

Description:

Hexfet power mosfet.
IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist.

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IRLI530NPBF HEXFET Power MOSFET International Rectifier

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IRLI530NPBF General Description

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