IRLU014N Datasheet - International Rectifier

IRLU014N HEXFET Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLU014N Features

* 5) 0.64 (.025) 0.25 (.010) M A M B NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 0.58 (.023) 0.46 (.018) 2.28 (.090) Part Marking

IRLU014N_InternationalRectifier.pdf