Description
l
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.06Ω
G
ID = 18A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D2Pak is a surface mount power pack
Features
- >.
- dv/dt controlled by RG Driver same type as D. U. T. ISD controlled by Duty Factor "D" D. U. T. - Device Under Test
+ V DD
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DataShee
DataSheet4U. com
Driver Gate Drive P. W. Period D=
P. W. Period VGS=10V.
- D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD.
- VGS = 5V for Logic Level Devices Fig 14. For N-Channe.