IRLZ24NS Datasheet - International Rectifier

Power MOSFET

IRLZ24NS Features

* >

* dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD et4U.com DataShee DataSheet4U.com Driver Gate Drive P.W. Period D= P.W. Period VGS=10V

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward

IRLZ24NS General Description

l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.06Ω G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig.

IRLZ24NS Datasheet (372.89 KB)

IRLZ24NS Datasheet Preview — Preview of IRLZ24NS PDF

Datasheet Details

Part number:

IRLZ24NS

Manufacturer:

International Rectifier

File Size:

372.89 KB

Description:

Power mosfet.
www.DataSheet4U.com PD - 91358E IRLZ24NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hol.

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IRLZ24NS Power MOSFET International Rectifier

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IRLZ24NS Features

IRLZ24NS General Description

Datasheet Details

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IRLZ24NS Distributor