JANTX2N6762 Datasheet - International Rectifier

JANTX2N6762 POWER MOSFET N-CHANNEL

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS JANTX2N6762 JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS IRF430 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transco.

JANTX2N6762 Features

* n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain

JANTX2N6762 Datasheet (144.82 KB)