JANTX2N6768 Datasheet (International Rectifier)

JANTX2N6768, POWER MOSFET N-CHANNEL

PD - 90339F REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRF350 JANTX2N6768 JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS IRF350 400V RDS(on) 0.300Ω ID 14A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transcond

JANTX2N6768 Features

* n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain