JANTXV2N6845 Datasheet - International Rectifier

JANTXV2N6845 POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A)

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.552B HEXFET ® JANTX2N6845 POWER MOSFET JANTXV2N6845 [REF:MIL-PRF-19500/563] [GENERIC:IRFF9120] P-CHANNEL Product Summary Part Number JANTX2N6845 JANTXV2N6845 BVDSS -100V RDS(on) 0.60Ω ID -4.0A -100 Volt, 0.60Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET.

JANTXV2N6845 Features

* s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter I D @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Curren

JANTXV2N6845 Datasheet (232.36 KB)

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Datasheet Details

Part number:

JANTXV2N6845

Manufacturer:

International Rectifier

File Size:

232.36 KB

Description:

Power mosfet p-channel(bvdss=-100v/ rds(on)=0.60ohm/ id=-4.0a).

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JANTXV2N6845 POWER MOSFET P-CHANNELBVdss =-100V Rdson =0.60ohm Id =-4.0A International Rectifier

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