JANTXV2N6800 Datasheet - International Rectifier

JANTXV2N6800 POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A)

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.432B HEXFET ® JANTX2N6800 POWER MOSFET JANTXV2N6800 [REF:MIL-PRF-19500/557] [GENERIC:IRFF330] N-CHANNEL Product Summary Part Number JANTX2N6800 JANTXV2N6800 BVDSS 400V RDS(on) 1.0Ω ID 3.0A 400 Volt, 1.0Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET trans.

JANTXV2N6800 Features

* s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ V GS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current

JANTXV2N6800 Datasheet (230.71 KB)

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Datasheet Details

Part number:

JANTXV2N6800

Manufacturer:

International Rectifier

File Size:

230.71 KB

Description:

Power mosfet n-channel(bvdss=400v/ rds(on)=1.0ohm/ id=3.0a).

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JANTXV2N6800 POWER MOSFET N-CHANNELBVdss =400V Rdson =1.0ohm Id =3.0A International Rectifier

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