* s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ V GS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current
JANTXV2N6800 Datasheet (230.71 KB)
JANTXV2N6800
International Rectifier
230.71 KB
Power mosfet n-channel(bvdss=400v/ rds(on)=1.0ohm/ id=3.0a).
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Provisional Data Sheet No. PD-9.432B
HEXFET
®
JANTX2N6800 POWER MOSFET JANTXV2N6800 [REF:MIL-PRF-19500/5.
📁 Related Datasheet
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Provisional Data Sheet No. PD-9.433B
HEXFET
®
JANTX2N6802 POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/5.
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Product Summary
Part Number
BVDSS
IRF9130
-100V
RDS(on)
ID -.
JANTXV2N6845 - POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A)
(International Rectifier)
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Provisional Data Sheet No. PD-9.552B
HEXFET
®
JANTX2N6845 POWER MOSFET JANTXV2N6845 [REF:MIL-PRF-19500/5.
JANTXV2N6847 - POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=1.5ohm/ Id=-2.5A)
(International Rectifier)
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Provisional Data Sheet No. PD-9.553B
HEXFET
®
JANTX2N6847 POWER MOSFET JANTXV2N6847 [REF:MIL-PRF-19500/5.
JANTXV2N6849 - P-Channel MOSFET
(International Rectifier)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39)
PD-90550G
IRFF9130 JANTX2N6849 JANTXV2N6849
JANS2N6849
100V, P-CH.
JANTXV2N6849U - 100V P-CHANNEL MOSFET
(International Rectifier)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS
PD-91716D
IRFE9130 JANTX2N6849U JANTXV2N6849U
100V, P-CHANNEL
REF: MIL-PRF-19500/564
Produc.
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