JANTXV2N6806 - P-Channel MOSFET

International Rectifier

Datasheet Details

Part number	JANTXV2N6806
Manufacturer	International Rectifier ↗
File Size	828.17 KB
Description	P-Channel MOSFET
Datasheet	JANTXV2N6806_InternationalRectifier.pdf

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.

Repetitive Avalanche Ratings.
Dynamic dv/dt Rating.
Hermetically Sealed.
Simple Drive Requirements.
ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Aval.

📁 JANTXV2N6806 Similar Datasheet

Other Datasheets by International Rectifier

JANTXV2N6800 - POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A)
JANTXV2N6802 - POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=2.5A)
JANTXV2N6804 - TRANSISTORS P-CHANNEL(Vdss=-100V/ Rds(on)=0.30ohm/ Id=-11A)
JANTXV2N6845 - POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A)
JANTXV2N6847 - POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=1.5ohm/ Id=-2.5A)
JANTXV2N6849 - P-Channel MOSFET

Published: Apr 7, 2005 |