L1404S - IRL1404S
l HEXFET® Power MOSFET D IRL1404S IRL1404L VDSS = 40V G S RDS(on) = 0.004Ω ID = 160A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switch
L1404S Features
* (.055 ) M AX. 1 0.54 (.4 15) 1 0.29 (.4 05) -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.
