Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4
TOP
B O TT O M
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www. irf. com
Free Datasheet http://www.0PDF. com
IRLL014N
Tape & Reel Information
SOT-223 Outline
4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 4 ) 1 .8 5 (.0 7 2 ) 1 .6 5 (.0 6 5 ) 0 .3 5 (.0 1 3 ) 0 .2 5 (.0 1 0 )
TR
2 .0 5 (.0 8 0 ) 1 .9 5 (.0 7 7 )
7 .5 5 (.2 9 7) 7 .4 5 (.2 9 4) 7 .6 0 (.2 9 9 ) 7 .4 0 (.2 9 2 ) 1 .6 0 (.0 6 2 ) 1 .5 0 (.0 5 9 ) TYP . F E E D D IR E C T IO N 1 2 .1 0 (.4 7 5 ) 1 1 .9 0 (.4 6 9 ) NOTE.
LL014N-InternationalRectifier.pdf
