LL014N - IRLL014N
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
LL014N Features
* T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4 TOP B O TT O M 8 www.irf.com Free Datasheet http://www.0PDF.com IRLL014N Tape & Reel Information SOT-223 Outline 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 4 ) 1 .8 5 (.0 7 2 ) 1 .6 5 (.0 6 5 ) 0 .3 5 (.0 1 3 ) 0 .2 5 (.0 1 0 ) TR 2 .0 5
