* L IN G D IM E N S IO N : M IL L IM E T E R .. 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 1 4 .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3 1 8 .4 0 (.7 2 4 ) M AX . 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245,
LL024N
International Rectifier
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Irll024n.
PD - 91895 IRLL024N HEXFET® Power MOSFET l l l www.DataSheet4U.com l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic d.
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