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AUIRFL024N Power MOSFET

AUIRFL024N Description

AUTOMOTIVE GRADE AUIRFL024N .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

AUIRFL024N Features

* Advanced Planar Technology
* Low On-Resistance
* Dynamic dV/dT Rating
* 150°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Q

AUIRFL024N Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremel

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