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AUIRFP064N Power MOSFET

AUIRFP064N Description

AUTOMOTIVE GRADE PD - 96375 AUIRFP064N l l l l l l l l l .
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

AUIRFP064N Features

* HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
* V(BR)DSS RDS(on) max. 55V 0.008Ω 110Ag G S ID

AUIRFP064N Applications

* this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremel

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