Datasheet Details
- Part number
- F9530N
- Manufacturer
- International Rectifier
- File Size
- 126.95 KB
- Datasheet
- F9530N_InternationalRectifier.pdf
- Description
- IRF9530N
F9530N Description
www.DataSheet.in PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
F9530N Features
* (.16 0) 3.55 (.14 0)
3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
0.93 (.03 7) 0.69 (.02 7) M B A M
3X
0.55 (.02 2) 0.46 (.01 8)
0 .3 6 (.01 4)
2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H
2 .92
F9530N Applications
* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB
Absolute Maximum Ratings
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