IRF9530N Datasheet | Specifications & PDF Download

www.DataSheet.in PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature

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IRF9530NS-VB IRF9530NS-VB Datasheet P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Max. -100 0.22 at VGS = - 10

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isc P-Channel MOSFET Transistor IRF9530N,IIRF9530N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.2Ω ·Enhancement mode: ·100% avalanche tes

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PD - 91523A IRF9530NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175°C Ope

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PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free De

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technolog

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www.DataSheet4U.com PD- 95439 IRF9530NSPbF IRF9530NLPbF • Lead-Free www.irf.com 1 04/26/05 IRF9530NS/LPbF 2 www.irf.com IRF9530NS/LPbF www.

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www.DataSheet4U.com PD- 95439 IRF9530NSPbF IRF9530NLPbF • Lead-Free www.irf.com 1 04/26/05 IRF9530NS/LPbF 2 www.irf.com IRF9530NS/LPbF www.

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technolog

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PD - 91523A IRF9530NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175°C Ope

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IRF9530NPBF www.VBsemi.com IRF9530NPBF Datasheet P-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Config

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PD - 91523A IRF9530NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175°C Ope

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