IRF9530NS
Overview
- Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IRF9530NS |
|---|---|
| Description | P-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 249.15 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF9530NS | Infineon | Power MOSFET |
| IRF9530NS | International Rectifier | Power MOSFET |
| IRF9530NSPBF | International Rectifier | Power MOSFET |
| IRF9530NSPbF | Infineon | Power MOSFET |
| IRF9530NS | VBsemi | P-Channel MOSFET |