IRF9530S
IRF9530S is P-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- -12A，-100V
- Single pulse avalanche energy rated
- Static Drain-Source On-Resistance: RDS(on) =0.3Ω(Max)
- SOA is power dissipation limited
- Nanosecond switching speeds
- Linear transfer characteristics
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRITION
- The power MOSFET is designed for applications such as switching regulators,switching convertors,motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
-100
Gate-Source Voltage
±20
Drain Current-continuous@ TC=25℃
-12
Drain Current-Single Plused
-48
Ptot
Total Dissipation@TC=25℃
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER...
