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IRF9530S - P-Channel MOSFET

Key Features

  • -12A，-100V.
  • Single pulse avalanche energy rated.
  • Static Drain-Source On-Resistance: RDS(on) =0.3Ω(Max).
  • SOA is power dissipation limited.
  • Nanosecond switching speeds.
  • Linear transfer characteristics.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc P-Channel Mosfet Transistor INCHANGE Semiconductor IRF9530S FEATURES ·-12A，-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Resistance: RDS(on) =0.