• Part: IRF9530SMD
  • Description: P-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Seme LAB
  • Size: 22.71 KB
Download IRF9530SMD Datasheet PDF
Seme LAB
IRF9530SMD
IRF9530SMD is P-Channel Power MOSFET manufactured by Seme LAB.
FEATURES ! 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) -100V -8A 0.35W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 7 (0 .3 8 1 ) 9 .3 8 (0 .3 6 9 ) 1 1 .5 8 (0 .4 5 6 ) 1 1 .2 8 (0 .4 4 4 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) - HERMETICALLY SEALED - SIMPLE DRIVE REQUIREMENTS SMD 1 Pad 1 - Gate Pad 2 - Drain Pad 3 - Source - LIGHTWEIGHT - SCREENING OPTIONS AVAILABLE - ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg Rq JC Gate - Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case ±20V 8A 5A 40A 45W 0.36W/°C - 55 to 150°C 2.8°C/W max. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://.semelab.co.uk Prelim. 07/00 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Test Conditions VGS = 0 ID = 1m A VGS = 10V VGS = 10V VDS = VGS VDS ³ 15V VGS = 0 VGS = 20V VGS = - 20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 8A VDS = 0.5BVDSS VDD = 50V ID = 8A RG = 7.5W ID = 8A ID = 5A ID = 8A ID = 250m A IDS = 5A VDS = 0.8BVDSS TJ = 125°C ID = 1m A Min. Typ. Max. Unit DBVDSS Temperature Coefficient of DTJ Breakdown...