Key Features
- Static drain-source on-resistance
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
IRF9530NSPbF
|
Infineon |
Power MOSFET |
|
IRF9530NLPbF
|
Infineon |
Power MOSFET |
|
IRF9530NPBF
|
VBsemi |
P-Channel MOSFET |
|
IRF9530S
|
Vishay |
Power MOSFET |
|
IRF9530
|
Vishay |
Power MOSFET |
|
IRF9531
|
Samsung Semiconductor |
P-Channel Power MOSFET |
|
IRF9532
|
Samsung Semiconductor |
P-Channel Power MOSFET |
|
IRF9533
|
Samsung Semiconductor |
P-Channel Power MOSFET |