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IRF9530N

Manufacturer: Inchange Semiconductor
IRF9530N datasheet preview

Datasheet Details

Part number IRF9530N
Datasheet IRF9530N-INCHANGE.pdf
File Size 237.54 KB
Manufacturer Inchange Semiconductor
Description P-Channel MOSFET
IRF9530N page 2

IRF9530N Overview

·bine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -14 IDM Drain Current-Single Pulsed -56 PD Total Dissipation @TC=25℃ 79 Tj Max. Operating Junction Temperature 175...

IRF9530N Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -bine with the fast switching speed and ruggedized device

IRF9530N from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
International Rectifier Logo IRF9530N Power MOSFET International Rectifier
International Rectifier Logo IRF9530NL Power MOSFET International Rectifier
Infineon Logo IRF9530NL Power MOSFET Infineon
Infineon Logo IRF9530NLPbF Power MOSFET Infineon
International Rectifier Logo IRF9530NLPBF Power MOSFET International Rectifier
Inchange Semiconductor logo - Manufacturer

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IRF9530N Distributor

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