Download IRF9530PBF Datasheet PDF
Inchange Semiconductor
IRF9530PBF
IRF9530PBF is P-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES - Static drain-source on-resistance: RDS(on)≤0.3Ω - Enhancement mode: - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRIPTION - Power management in notebook puter - Portable equipment and battery powered systems - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 Gate-Source Voltage ±20 Drain Current-Continuous -12 Drain Current-Single Pulsed -48 Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal...