| Part Number | IRF9530NS Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | . . |
IRF9530NS Datasheet and Specifications PDF
The IRF9530NS is a Power MOSFET.
| Part Number | IRF9530NS Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot varia.
*Static drain-source on-resistance: RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A) *Advanced trench process technology *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Fast switching application. *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO. |
| Part Number | IRF9530NS Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | l l D VDSS = -100V RDS(on) = 0.20Ω G ID = -14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar. sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9530NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Dr. |
| Part Number | IRF9530NS Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
IRF9530NS-VB
IRF9530NS-VB Datasheet P-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
-100
0.22 at VGS = - 10 V 0.24 at VGS = - 4.5 V
ID (A) - 12 - 10
Qg (Ty.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg and UIS Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Power Switch * Load Switch in High Current Applications * DC/DC Converters GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C. |